Title of article
A study of oxygen dislocation interactions in CZ-Si
Author/Authors
Armando and Senkader، نويسنده , , S. and Jurkschat، نويسنده , , K. and Wilshaw، نويسنده , , P.R. and Falster، نويسنده , , R.J.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
5
From page
111
To page
115
Abstract
The interaction between dislocations and oxygen atoms in silicon has been studied. The effect of immobilization of dislocations by the segregation of oxygen to the dislocation core (dislocation locking) has been investigated for different oxygen concentrations and annealing conditions. It has been revealed that oxygen locking of dislocations shows three different regimes of behaviour. A numerical model for the dislocation locking process of oxygen atoms has been presented and used to interpret the experimental results.
Keywords
Dislocation , Mechanical strength , Czochralski , Oxygen , Silicon , warpage
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2000
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2135285
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