Author/Authors :
Misiuk، نويسنده , , A and Barcz، نويسنده , , A and Ratajczak، نويسنده , , J and Lopez، نويسنده , , M and Romano-Rodriguez، نويسنده , , A and Bak-Misiuk، نويسنده , , J and Surma، نويسنده , , H.B and Jun، نويسنده , , J and Antonova، نويسنده , , I.V and Popov، نويسنده , , V.P، نويسنده ,
Abstract :
The effect of external stress exerted by enhanced (up to 1.5 GPa) hydrostatic pressure (HP) of argon ambient during annealing of oxygen-implanted silicon (oxygen dose ≤1×1017 cm−2) up to 1470 K on oxygen agglomeration has been investigated by secondary ion mass spectrometry, transmission electron microscopy, and X-ray and photoluminescence methods. HP treatment results in oxygen distribution shift and massive creation of oxygen precipitates, whereas creation of dislocations is strongly suppressed.
Keywords :
Silicon , Oxygen , Implantation , hydrostatic pressure , strain , Dislocation
