Electronic device fabrication by simple hydrogen enhanced thermal donor formation processes in p-type Cz-silicon

The incorporation of hydrogen into p-type Czochralski (Cz) silicon by a plasma results in an enhanced thermal donor (TD) formation. Counter doping by TDs and a rapid p–n junction formation occurs in p-type Si if the acceptor concentration is lower than 1016 cm−3. Two process routes are discussed: (1) a one-step process where p–n junctions appear just after a H plasma exposure at 400–450°C; (2) a two-step process where the p–n junction formation requires an annealing at 400–450°C after a plasma treatment at lower temperatures. No dopant incorporation is involved in the processes. A controlled TD formation can be used for a rapid low temperature technology for the fabrication of diodes with deep p–n junctions. The characterization of the samples/devices was done by spreading resistance probe analysis, I(V)-, and C(V) measurements.