Title of article
Optical absorption of precipitated oxygen in silicon at liquid helium temperature
Author/Authors
Sassella، نويسنده , , A and Borghesi، نويسنده , , A. and Borionetti، نويسنده , , A and Geranzani، نويسنده , , P، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
6
From page
224
To page
229
Abstract
Optical absorption measurements are reported, carried out in the medium infrared range at liquid helium temperature on silicon wafers after different thermal treatments for oxygen precipitation. The low temperature spectra show a complex band structure where the contributions related to precipitates with different shapes can be distinguished and, in some cases, quantified on the basis of the results of an effective medium model.
Keywords
infrared spectroscopy , Silicon , oxygen precipitation , low temperature
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2000
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2135307
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