Potential applications of nanoscale semiconductor quantum devices for information and telecommunications technologies

This paper presents the results of some of our studies on nanoscale semiconductor quantum structures that bear potential capabilities to bring forth new device concepts in future information and telecommunications technologies. Experimental and theoretical results include: quantum interference effects in AlGaAs/GaAs corrugated one-dimensional wires, room temperature electron tunneling through Ag nanoclusters on silicon, and single electron tunneling through a circular quantum dot array. We also have found several new ways of forming semiconductor nanostructures such as Si nano-pillars, GaAs quantum dots, and InGaAs V-grooved quantum wires. The results collectively suggest that nanoscale semiconductor quantum structures can be useful in advanced forms of information and telecommunications technologies.