GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared detectors

The recent development of p-GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared (>40 μm) detectors is briefly reviewed. The emphasis is on the detector performance, which includes responsivity, quantum efficiency, bias effects, cut-off wavelength, uniformity, noise, and negative capacitance characteristics. Promising results indicate that p-GaAs HIWIP detectors have great potential to become a strong competitor in far-infrared applications.