Title of article :
Quantum well bandgap engineering for 1.5 μm telecom applications
Author/Authors :
Ramdane، نويسنده , , A and Ougazzaden، نويسنده , , A، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
4
From page :
66
To page :
69
Abstract :
After briefly presenting the advantages of using strained layers for long wavelength lasers, a review of some approaches devised for polarization independence of guided-wave in-line semiconductor optical amplifiers and electroabsorption modulators is given, together with recent test-bed applications. The achievement of photonic integrated circuits based on quantum well tuning is finally reported.
Keywords :
Quantum well bandgap engineering , Test-bed applications , Telecom applications (1.5 ?m)
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2000
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2135327
Link To Document :
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