Title of article :
Coupled cavity DQW semiconductor lasers
Author/Authors :
Serpengüzel، نويسنده , , A and Sa?ol، نويسنده , , B.E and Avrutin، نويسنده , , E.A and De La Rue، نويسنده , , R.M and Laybourn، نويسنده , , P.J.R and Stanley، نويسنده , , C.R، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
4
From page :
80
To page :
83
Abstract :
Coupled cavity effects has been observed in the electroluminescence spectra of monolithic GaAs/GaAlAs double quantum well graded index separate confinement heterostructure semiconductor diode lasers. A time domain analysis has been performed in order to simulate the experimentally observed results. The theoretically calculated spectra are in good agreement with the experimentally observed spectra.
Keywords :
Semiconductor , Coupled cavity , Diode laser
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2000
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2135330
Link To Document :
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