Title of article :
The evolution of group III nitride semiconductors: Seeking blue light emission
Author/Authors :
Akasaki، نويسنده , , Isamu، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
6
From page :
101
To page :
106
Abstract :
Renaissance and progress in crystal growth and achievement of conductivity control of group III nitride semiconductors in the past quarter century are reviewed as the groundwork for recently developed high-performance blue and green light emitting diodes, laser diodes and transistors based on nitrides. Quite recent advance in crystal growth is also reported.
Keywords :
Laser , Light emitting diode , Conductivity control , Organometallic vapor phase epitaxy , Group III nitrides , Low-temperature buffer
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2000
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2135334
Link To Document :
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