Title of article
Resonant cavity light-emitting diodes at 660 and 880 nm
Author/Authors
Vilokkinen، نويسنده , , V and Sipilن، نويسنده , , P and Melanen، نويسنده , , P and Saarinen، نويسنده , , M and Orsila، نويسنده , , S and Dumitrescu، نويسنده , , M and Savolainen، نويسنده , , P and Toivonen، نويسنده , , M and Pessa، نويسنده , , M، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
3
From page
165
To page
167
Abstract
Resonant cavity light-emitting diodes (RCLEDs) operating at λ≅660 nm and λ≅880 nm have been fabricated and studied. The RCLED layer structures consisted of 1−λ thick cavities sandwiched between AlGaAs distributed Bragg reflectors. The cavities were detuned to improve temperature stability and light extraction. The temperature induced red-shifts in the peak emission wavelength were found to be 0.14 and 0.22 nm °C−1 for the 660- and 880-nm devices, respectively.
Keywords
Solid-source molecular beam epitaxy (SSMBE) , Microcavity , Distributed Bragg reflector (DBR) , Resonant cavity light-emitting diodes (RCLEDs)
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2000
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2135378
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