Author/Authors :
Prunnila، نويسنده , , M and Erنnen، نويسنده , , S and Ahopelto، نويسنده , , J and Manninen، نويسنده , , A and Kamp، نويسنده , , M and Emmerling، نويسنده , , M and Forchel، نويسنده , , A and Kristensen، نويسنده , , A and Sorensen، نويسنده , , B.S and Lindelof، نويسنده , , P.E and Gustafsson، نويسنده , , A، نويسنده ,
Abstract :
Fabrication and electrical properties of silicon quantum point contacts are reported. The devices are fabricated on bonded silicon on insulator (SOI) wafers by combining CMOS process steps and e-beam lithography. Mobility of 9000 cm2 Vs−1 is measured for a 60 nm-thick SOI film at 10 K. Weak localization data is used to estimate the phase coherence length at 4.2 K The point contacts show step like behaviour in linear response conductance at 1.5 K. At 200 mK universal conductance fluctuations begin to dominate the conductance curve. The effective diameter of quantum point constrictions of the devices are estimated to be 30–40 nm. This estimate is based on TEM analysis of test structures and AFM images of the actual device.
