Dynamic latch-up in advanced LIGBT structures at high operating temperatures

The dynamic latch-up process in conventional and modified lateral insulated gate bipolar transistor (LIGBT) structures is studied in this paper. In a previous study, we have argued that the modified structure shows a superior static latch-up performance at high operating temperatures. The dynamic latch-up has also been measured under resistive load at different operating temperatures. The dependence of the dynamic latch-up current with the gate resistance has also been taken into account. A figure of merit of the dynamic latch-up current normalized to the static latch-up current level as a function of operating temperature shows the excellent electrical behaviour of the proposed modified LIGBT structure at high temperatures when compared with its conventional counterpart.