Low temperature chemical vapor deposition of 3C-SiC on 6H-SiC — high resolution X-ray diffractometry and synchrotron X-ray topography study

Highly perfect 3C-SiC thin films, deposited on 6H-SiC by the chemical vapor deposition at low temperature with various Cl/Si, H/Si and C/Si ratios, were characterized by X-ray high resolution triple crystal diffractometry, synchrotron white beam X-ray topography (SWBXT) and synchrotron grazing incidence topography (SGIT) methods. The films were epitaxial with a low defect density (mostly in the range of 107 cm−2). The best films were produced with optimum C/Si ratio in the gas phase while the poorest quality films were produced at lower H2/Si ratio. Synchrotron topography revealed defects like cellular dislocation structure, super screw dislocations, pores, low angle grain boundaries and double positioning boundaries.