Calculations of cobalt silicide and carbide formation on SiC using the Gibbs free energy

An understanding of the chemical reactions at the metal–semiconductor interface is essential when designing electronic devices capable of operation at elevated temperatures. We utilized a Gibbs ternary diagram approach to determine the temperature sequence of silicide and carbide formation and stability in Co–SiC interfacial reactions. Limitations of the thermodynamic approach are discussed, and comparisons to experimental results are made.