Title of article :
Memory effect and its switching by electric field in solid-state gas sensors
Author/Authors :
Vasiliev، نويسنده , , R.B. and Rumyantseva، نويسنده , , M.N and Ryabova، نويسنده , , L.I and Akimov، نويسنده , , B.A and Labeau، نويسنده , , M and Langlet، نويسنده , , M and Gaskov، نويسنده , , A.M، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
The Au/n-SnO2/SiO2/p-Si/Al heterostructures were grown using aerosol-gel and spray pyrolysis methods. The effect of capacitance memory was discovered in the presence of polar gas molecules: C2H5OH, NH3, H2O. The mechanism of gas sensitivity, capacitance memory and its switching was associated with the process taking place on the SnO2/SiO2 interface.
Keywords :
Semiconductor heterostructure , Capacitance memory , Gas sensor , Field effect
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
