Effect of p-doping profile on performance of strained InGaAs/InGaAsP multiple quantum well buried heterostructure laser diodes with Fe- or p/n/p-doped InP current blocking layer

The effect of p-doping profile on performance of InGaAs/InGaAsP strained MQW BH LD with Fe-doped or p/n/p-doped InP current blocking layer was investigated. LDs with a p-doped SCH exhibited a higher slope efficiency compared to those with an undoped SCH regardless of current blocking type. The observed high degree of nonlinearity in the light-output power and low characteristic temperature of the semi-insulating blocking type lasers with a p-doped SCH layer suggest that the interdiffusion of Fe and Zn across the interface between p-doped SCH (and p-InP:Zn) layer and SI-InP:Fe layer has given rise to leakage currents in laser device.