Thickness dependence of the structural and electrical properties of InAs layers epitaxially grown by MBE on GaAs (001)

The aim of this paper is to present some problems in the materials engineering connected with miniaturization of geometric dimensions of electronic structures. The examples are taken from InAs epitaxial layers. Our results as well as various results from the literature on crystallographic and electronic properties of InAs epitaxial layers deposited on insulating GaAs 〈001〉 wafers by MBE method are described. A novel two-layer model derived from the one of Petritz is proposed. It allows us to calculate crystalline (FWHM) and electronic (concentration, mobility) properties of any one undoped InAs layer with any one thickness. A comparative analysis of our results and those from literature was performed. The electrochemical proof of the proposed model was presented.