Anisotropy of fields of stress in Si monocrystals with ordered dislocation structure

An attempt is made with X-ray triple crystal diffractometry to detect anisotropy of X-ray scattering by a structure consisting of a number of parallel dislocations, introduced into silicon by specially controlled sample deformation. Diffuse component scattering increased if the plane of scattering was perpendicular to the direction of dislocations (ϕ=90°). The magnitude of this effect increases with increasing density of the introduced dislocations and depends on the direction of their Burgers vectors. The respective changes of the equal-intensity contours of X-ray scattering near reciprocal lattice points for the 111 reflection are investigated. The magnitudes of coherent and diffuse components of integral reflectivity were obtained experimentally. This yields quantitative information on the diffraction characteristics of structural perfection of the material. The dependencies of these characteristics are given, as well as of half-widths of a principal peak of a diffraction curve, on the angle of sample orientation relative to the X-ray beam ϕ and ϑB. A comparison of appropriate data with those obtained for dislocation-free crystals of non-crucible zone melting silicon is carried out. The results obtained are discussed within the framework of existing theories of X-ray scattering and dislocation complexes.