Title of article
The base contact recombination current and its effect on the current gain of surface-passivated InGaP/GaAs HBTs
Author/Authors
Lee، نويسنده , , Jong-Min and Lee، نويسنده , , Tae-Woo and Park، نويسنده , , Sung Ho and Min، نويسنده , , Byoung-Gue and Park، نويسنده , , Moon-Pyung and Lee، نويسنده , , Kyung Ho and Choi، نويسنده , , In-Hoon، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
63
To page
67
Abstract
In this study, the effect of the emitter-base contact spacing on the current gain of InGaP/GaAs HBTs has been described and the base contact recombination current has been experimentally studied. When devices were passivated by nitride, the current gain of InGaP/GaAs HBTs showed no variation with the perimeter to area ratio, which suggested that the surface recombination current of InGaP/GaAs HBTs was negligible, leading the base contact recombination current to affect the current gain. It was found that the base contact recombination current significantly degraded the current gain when the emitter-base contact spacing was reduced to below 0.5 μm. The diode equation was used to model the base contact recombination current, and an ideality factor of 1.76 was obtained.
Keywords
Base contact recombination , InGaP , surface recombination , HBT , current gain
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2136363
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