Orientation control and electrical properties of sputtered Pb(Zr,Ti)O3 films

Relationship between the crystallographic orientation and the electrical properties of the Pb(Zr,Ti)O3, (PZT) thin films prepared by rf magnetron sputtering was investigated. The PZT films were deposited at 150, 250 or 340°C and, followed by rapid thermal annealing (RTA). It was found that the crystallographic orientation of the PZT films could be controlled only by the deposition temperature and the ferroelectric properties were dependent upon the orientation of the films. It was suggested that the difference in the atomic mobility at the substrate surface during deposition was closely related to the film orientation. The films with (111) orientation showed relatively high capacitance and the remanant polarization values.