Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon: the case of BF2+ implantation

We have simulated transient enhanced diffusion (TED) in the presence of end-of-range (EOR) defects produced by Ge amorphization followed by BF2+ implantation. Ostwald ripening of EOR defects has been taken into account. A comparison of annealed profiles with equivalent B+ implantation shows that the existing models are not sufficient to simulate the BF2+ experimental profiles where the boron diffusion depth is very low. We have proposed that the presence of fluorine can act as sinks for interstial boron and, hence, reduces the boron diffusion depth in order to obtain a good approximation of experimental profiles.