Author/Authors :
Cirlin، نويسنده , , G.E. and Polyakov، نويسنده , , N.K. and Petrov، نويسنده , , V.N. and Egorov، نويسنده , , V.A. and Denisov، نويسنده , , D.V. and Volovik، نويسنده , , B.V. and Ustinov، نويسنده , , V.M. and Alferov، نويسنده , , Zh.I. and Ledentsov، نويسنده , , N.N. and Heitz، نويسنده , , R. and Bimberg، نويسنده , , D. and Zakharov، نويسنده , , N.D. and Werner، نويسنده , , P. and Gِsele، نويسنده , , U.، نويسنده ,
Abstract :
MBE growth and properties of InAs nanoscale islands formed on silicon are reported. Islands capped with Si emit a photoluminescence band in the 1.3 μm region. Upon annealing at increased substrate temperature, extensive interdiffusion leads to the formation of an InAs solid solution in the Si cap layer. Additionally, InAs-enriched regions with extensions of ∼6 nm, exhibiting two kinds of ordering, are observed. The ordering of InAs molecules occurs, respectively, in (101) and 101̄ planes inclined to (110) and 11̄0 planes parallel to the [001] growth direction.
Keywords :
Silicon , Photoluminescence , Quantum dots , Transmission electron microscopy , InAs , Molecular Beam Epitaxy
