Author/Authors :
Horvلth، نويسنده , , Zs.J. and Makhniy، نويسنده , , V.P. and Demych، نويسنده , , M.V. and Van Tuyen، نويسنده , , Vo and Balلzs، نويسنده , , J and Réti، نويسنده , , I. and Gorley، نويسنده , , P.M. and Ulyanitsky، نويسنده , , K.S. and Horley، نويسنده , , P.P. and Stifter، نويسنده , , D. and Sitter، نويسنده , , H. and Dَzsa، نويسنده , , L.، نويسنده ,
Abstract :
The electrical and photoelectrical behaviour of Au/n-CdTe junctions prepared on CdTe monocrystalline substrates and CdTe epitaxial layers grown on n+ GaAs substrates were studied. The electrical and photoresponse properties depended very strongly on the parameters of the compensated high-resistive layer at the CdTe surface formed by annealing during preparation.
Keywords :
Schottky barriers , Electrical characteristics , CdTe , Photoresponse , Spectral responsivity
