Author/Authors :
Venger، نويسنده , , Ye.F. and Semenova، نويسنده , , G.N. and Korsunskaya، نويسنده , , N.E. and Semtsiv، نويسنده , , M.P. and Borkovskaya، نويسنده , , L.V. and Sharibaev، نويسنده , , M. and Braylovsky، نويسنده , , Ye.Yu. and Sadofyev، نويسنده , , Yu.G.، نويسنده ,
Abstract :
The effect of electron and X-ray irradiation on the optical characteristics of CdZnTe/ZnTe quantum-size structures has been investigated. A comparison between the results of both irradiations has shown an essential role of electron excitation in radiation enhancement of Cd diffusion that is one of the reasons for degradation of the II–VI-based quantum-size structures. High defect density in the barrier layer and high stress level are considered to serve as additional reasons for degradation of the CdTe-based quantum size structures under irradiation.
