Author/Authors :
Horvلth، نويسنده , , Zs.J. and Van Tuyen، نويسنده , , Vo and Franchi، نويسنده , , S. and Bosacchi، نويسنده , , A. Heinke Frigeri، نويسنده , , P. and Gombia، نويسنده , , E. and Mosca، نويسنده , , R. and Pal، نويسنده , , D. and Kalmلr، نويسنده , , I. and Szentpلli، نويسنده , , B.، نويسنده ,
Abstract :
The Schottky barrier height in Al/n-In0.35Ga0.65As was engineered using thin p-type near-interface In0.35Ga0.65As layers grown by molecular beam epitaxy. The effect of the thickness and doping level of the p-type layer on the barrier height was also studied by computer simulation. A good agreement was obtained between the calculated and experimental barrier height values. An experimental Schottky barrier height of 0.67 eV with an ideality factor of 1.15 has been achieved.
Keywords :
Schottky barriers , InGaAs , Computer simulation , Barrier height engineering
