Title of article
Engineered Schottky barriers on n-In0.35Ga0.65As
Author/Authors
Horvلth، نويسنده , , Zs.J. and Van Tuyen، نويسنده , , Vo and Franchi، نويسنده , , S. and Bosacchi، نويسنده , , A. Heinke Frigeri، نويسنده , , P. and Gombia، نويسنده , , E. and Mosca، نويسنده , , R. and Pal، نويسنده , , D. and Kalmلr، نويسنده , , I. and Szentpلli، نويسنده , , B.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
4
From page
248
To page
251
Abstract
The Schottky barrier height in Al/n-In0.35Ga0.65As was engineered using thin p-type near-interface In0.35Ga0.65As layers grown by molecular beam epitaxy. The effect of the thickness and doping level of the p-type layer on the barrier height was also studied by computer simulation. A good agreement was obtained between the calculated and experimental barrier height values. An experimental Schottky barrier height of 0.67 eV with an ideality factor of 1.15 has been achieved.
Keywords
Schottky barriers , InGaAs , Computer simulation , Barrier height engineering
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2136611
Link To Document