Author/Authors :
Cassette، نويسنده , , S. and Delage، نويسنده , , S.L. and Chartier، نويسنده , , E. and Floriot، نويسنده , , D. and Poisson، نويسنده , , M.A. and Garcia، نويسنده , , J.C. and Grattepain، نويسنده , , C. and Mimila Arroyo، نويسنده , , J. and Plana، نويسنده , , Mary R. and Bland، نويسنده , , S.W.، نويسنده ,
Abstract :
We report the result of investigation on hydrogen effects on GaInP/GaAs HBT structures originating from different MOCVD and CBE suppliers. It is demonstrated that hydrogen gives rise to initial unstable electrical behaviour by cross-examination of samples with and without hydrogen either intrinsically or by thermal-assisted removal. Annealing conditions to remove hydrogen have been optimized on the basis of SIMS analyses and Gummel plot characteristics to control eventual degradation of the junctions. It has been found that under particular doping and growth conditions, C2H complexes can be formed. These defects appear more stable than CH complexes which may explain the difficulty to remove hydrogen from some epitaxial layers.
