Title of article
Study of structural defects limiting the luminescence of InGaN single quantum wells
Author/Authors
Cremades، نويسنده , , Ana and Piqueras، نويسنده , , J. and Albrecht، نويسنده , , M. and Stutzmann، نويسنده , , M. and Strunk، نويسنده , , H.P.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
313
To page
317
Abstract
InGaN quantum well (QW) structures with different thicknesses have been characterised by means of cathodoluminescence (CL) in the scanning electron microscope and transmission electron microscopy (TEM), in order to study the structural defects that limit the device operation. Misfit dislocations appear as non-radiative centres in the CL images and compete with the quantum-well related luminescence. The luminescence red shift with increasing QW thickness has been found to be influenced by composition fluctuations.
Keywords
Structural defects , Single quantum wells , Luminescence , InGaN
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2136670
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