Title of article
Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC
Author/Authors
Weingنrtner، نويسنده , , R. and Bickermann، نويسنده , , M. and Bushevoy، نويسنده , , S. and Hofmann، نويسنده , , D. and Rasp، نويسنده , , M. and Straubinger، نويسنده , , T.L. and Wellmann، نويسنده , , P.J. and Winnacker، نويسنده , , A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
357
To page
361
Abstract
An optical characterization method for determination of spatial doping level concentration in n-type 4H-SiC and p-type 6H-SiC is discussed. The absorption bands of free charge carriers at 460 nm in n-type 4H-SiC are used to determine its doping concentration. In p-type 6H-SiC, the band edge related absorption at 410 nm is a measure for the doping concentration. In both cases, Hall measurements are performed for calibration. Various examples of SiC-wafer mappings are shown and the relationships to crystal growth conditions, i.e. control of doping level and distribution, are investigated.
Keywords
silicon carbide , Doping level determination , Crystal growth , Absorption mapping , polytypes
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2136711
Link To Document