Title of article
Ferroelectrics: new wide-gap materials for UV detection
Author/Authors
Pintilie، نويسنده , , L. and Pintilie، نويسنده , , I.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
4
From page
388
To page
391
Abstract
Photoconductive properties of some sol-gel deposited, ferroelectric thin films are investigated in the ultraviolet (UV) domain. The investigated materials are: Bi4Ti3O12 (BiT); SrBi2Ta2O9 (SBT) and Pb(Zr0.45Ti0.55)O3 (PZT). It was found that all these materials exhibit pronounced photoconductivity in the 250–500 nm domain. The best current responsivity was obtained for Bi4Ti3O12 (BiT) films.
Keywords
photoconductivity , Wide band gap semiconductors , Thin film , Ferroelectric
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2136736
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