Title of article :
Microscopic origin of Er3+ emission in mixed amorphous-nanocrystalline Si:H films
Author/Authors :
Aldabergenova، نويسنده , , S.B and Albrecht، نويسنده , , M. and Strunk، نويسنده , , H.P. and Viner، نويسنده , , J. and Taylor، نويسنده , , P.C and Andreev، نويسنده , , A.A.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
ErO6 complexes, where every Er3+ ion is surrounded by six oxygen atoms forming an octahedron with C3v point symmetry are found to explain the strong Stark splitting of the characteristic Er3+ emission observed in the 1460–1610 nm range. An a-Si:H matrix serves as an ideal semiconductor host to permit co-doped O atoms to form an optimal ligand field around Er3+ ions.
Keywords :
Optimal ligand field , Stark splitting , a-Si:H matrix , microstructure , Er3+ emission
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
