Author/Authors :
Kleider، نويسنده , , J.P and Longeaud، نويسنده , , C. and Meaudre، نويسنده , , R. and Meaudre، نويسنده , , M. and Vignoli، نويسنده , , S. and Koughia، نويسنده , , K.V. and Terukov، نويسنده , , E.I. and Konkov، نويسنده , , O.I.، نويسنده ,
Abstract :
The electronic properties of Er doped PECVD a-Si:H films, produced by the evaporation of an Er containing metal-organic compound into the glow discharge have been investigated. All data are clearly explained by higher electron concentrations than in undoped a-Si:H suggesting that Er may induce n-type doping in a-Si:H. Such films combine good electronic properties with high photoluminescence intensity at 1.54 μm.
Keywords :
Photoluminescence , Erbium , amorphous silicon , Transport properties
