Title of article
Mid-infrared induced quenching of photoluminescence in Si:Er
Author/Authors
M. Forcales، نويسنده , , M. and Bradley، نويسنده , , I.V. and Wells، نويسنده , , J.-P.R. and Gregorkiewicz، نويسنده , , T.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
3
From page
80
To page
82
Abstract
The recently reported effect of luminescence quenching by a mid-infrared (MIR) pulse from a free-electron laser was investigated in various Si:Er materials. No quenching was observed in Si:Er samples whose photoluminescence spectra were dominated by the so-called ‘cubic’ centers. Furthermore, in addition to the low-symmetry Er-related spectra, the MIR-induced quenching was found to take place also for a broad emission band centered around 1.4 μm, and usually assigned to implantation damage. The band-edge excitonic emission remained unaffected by the MIR radiation.
Keywords
Photoluminescence , Silicon , Erbium , Free-electron laser
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2136809
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