Range of ion-implanted rare earth elements in Si and SiO2

The rare earth elements Er and Yb were ion implanted into Si and SiO2 with energies between 300 and 800 keV and doses between 1014 and 1015 cm−2. The range distributions were measured with secondary ion mass spectrometry (SIMS). It is found that the experimental range is about 20% larger and the width is up to 50% larger than values obtained by simulations with the TRIM code. Simulations with the Monte Carlo code IMSIL show that the distributions can be fitted by both reducing the electronic stopping power and modifying the universal potential for nuclear stopping.