Title of article :
Photoluminescence of ytterbium doped amorphous silicon and silicon carbide
Author/Authors :
Terukov، نويسنده , , E.I. and Kudoyarova، نويسنده , , V.Kh. and Kuznetsov، نويسنده , , A.N. and Koughia، نويسنده , , K.V. and Weiser، نويسنده , , G. and Kuehne، نويسنده , , H.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
The rare earth doped samples of a-Si:H and a-Si:C:H were produced by magnetron assisted silane decomposition (MASD) technique. Two mechanisms of energy transfer from host material to embedded rare earth ions are possible in amorphous silicon based alloys depending on the material composition and ion properties. The PL intensity of specific ions and the PL temperature dependence may be effectively varied by the appropriate choice of alloy composition.
Keywords :
Erbium , Photoluminescence , Ytterbium , amorphous silicon
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B