Title of article
Photoluminescence of ytterbium doped amorphous silicon and silicon carbide
Author/Authors
Terukov، نويسنده , , E.I. and Kudoyarova، نويسنده , , V.Kh. and Kuznetsov، نويسنده , , A.N. and Koughia، نويسنده , , K.V. and Weiser، نويسنده , , G. and Kuehne، نويسنده , , H.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
3
From page
161
To page
163
Abstract
The rare earth doped samples of a-Si:H and a-Si:C:H were produced by magnetron assisted silane decomposition (MASD) technique. Two mechanisms of energy transfer from host material to embedded rare earth ions are possible in amorphous silicon based alloys depending on the material composition and ion properties. The PL intensity of specific ions and the PL temperature dependence may be effectively varied by the appropriate choice of alloy composition.
Keywords
Erbium , Photoluminescence , Ytterbium , amorphous silicon
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2136876
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