Investigation of beryllium implanted P-type GaN

We report the preliminary results of beryllium implanted into P-type GaN and the effects on the characteristic of Mg-doped P-GaN. These samples were implanted with Be ions were implanted with two different energies of 50 and 150 keV at two different doses of ∼1013 and 1014 cm−2 at room temperature. Surface morphology and photoluminescence measurements are presented.