Title of article :
Annealing behavior of Pd/GaN (0001) microstructure
Author/Authors :
Kim، نويسنده , , C.C. and Je، نويسنده , , J.H. and Kim، نويسنده , , D.W. and Baik، نويسنده , , H.K. and Lee، نويسنده , , S.M. and Ruterana، نويسنده , , Pierre، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
We reveal the existence of interfacial, epitaxial, Pd grains in an as-deposited Pd film evaporated on GaN (0001) at room temperature. The origin of the Pd epitaxy was attributed to 6/7 matched interface structure. The Pd film was completely transformed to Ga2Pd5 and Ga5Pd gallides in epitaxial relationships with GaN at an annealing temperature of 700°C.
Keywords :
PD , Gallide , microstructure , Interfacial structure , epitaxy
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
