Title of article
Microstructure of GaN nucleation layer during initial stage MOCVD growth
Author/Authors
Kim، نويسنده , , C.C. and Je، نويسنده , , J.H. and Yi، نويسنده , , M.S. and Noh، نويسنده , , D.Y. and Degave، نويسنده , , F. and Ruterana، نويسنده , , Pierre، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
3
From page
108
To page
110
Abstract
The microstructure in GaN nucleation layers was studied in synchrotron X-ray scattering and transmission electron microscopy experiments. We revealed the existence of tensile-strained interfacial domains, which was originated from 6/7 matched interface structure.
Keywords
GaN , Nucleation Layer , tensile strain , Interface structure , microstructure
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2137046
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