Title of article :
Multiple atomic configurations of the a edge threading dislocation in GaN
Author/Authors :
Chen، نويسنده , , J and Ruterana، نويسنده , , P and Nouet، نويسنده , , G، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
3
From page :
117
To page :
119
Abstract :
High-resolution transmission electron microscopy has recently shown that three atomic configurations of edge threading dislocations can exist in GaN. In this work, we have used a modified empirical potential (Stillinger–Weber) to calculate the energy of these three configurations. The obtained results show that the five-/seven-atom configuration is the most stable, and the four-atom configuration has the highest energy, confirming the experimental observations.
Keywords :
Energy , Dislocations , atomic structure , Empirical potential
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2001
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2137058
Link To Document :
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