Title of article
Optical properties of GaNAs/GaAs structures
Author/Authors
Buyanova، نويسنده , , I.A and Chen، نويسنده , , W.M and Pozina، نويسنده , , G and Hai، نويسنده , , P.N and Monemar، نويسنده , , B and Xin، نويسنده , , H.P and Tu، نويسنده , , C.W، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
143
To page
147
Abstract
We review our recent results on optical characterization of MBE-grown GaNAs/GaAs quantum structures with N content up to 4.5%, by employing photoluminescence (PL), PL excitation, and time-resolved PL spectroscopies. The dominant PL mechanism has been determined as recombination of excitons trapped by potential fluctuations of the band edge, due to composition disorder and strain nonuniformity of the alloy. The estimated value of the localization potential is around 60 meV for the low-temperature grown structures and can be reduced by increasing the growth temperature or using post-growth rapid thermal annealing (RTA).
Keywords
disorder , GaNAs , localization , Photoluminescence , Recombination , DEFECT
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2137087
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