Renormalization of the exciton parameters in piezoelectric nitride quantum structures: the effects of injection intensity and temperature

Exciton properties have been calculated for polarized GaN/AlGaN quantum well (QW) as a function of the injection intensity for various temperatures. A self-consistent process is performed to solve Schrödinger and Poisson equations, and a trial function that takes into account quantum exclusion principle in the filling of the reciprocal space is chosen for the exciton. When carriers are injected in the quantum structure, three different regimes are evidenced before the complete bleaching of the electron–hole interaction at large excitation intensities. We show that, for a given structure, the critical injection intensity of carriers at which this exciton starts to dissociate due to kinetic effects increases with the temperature of the lattice.