Title of article
Donor binding energies in group III-nitride-based quantum wells: influence of internal electric fields
Author/Authors
Morel، نويسنده , , A and Lefebvre، نويسنده , , P and Taliercio، نويسنده , , T and Gallart، نويسنده , , M and Gil، نويسنده , , B and Mathieu، نويسنده , , H، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
3
From page
221
To page
223
Abstract
We present calculations of the donor binding energy in GaN–AlxGa1−xN single quantum wells, including the effects of internal electric fields induced by spontaneous and piezoelectric polarizations. The variation of this energy versus position of the donor ion in the structure is of several tens of meV, i.e. much larger than for familiar quantum well systems. Realistic cases including the donor in the well and in the surrounding barriers are considered.
Keywords
Donor binding energies , GaN/AlGaN quantum wells , Internal electric fields
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2137182
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