Title of article :
Real defect concentration measurements of nuclear detector materials by the combination of PICTS and SCLC methods
Author/Authors :
Ayoub، نويسنده , , M and Hage-Ali، نويسنده , , M and Koebel، نويسنده , , J.M and Régal، نويسنده , , R and Rit، نويسنده , , C and Klotz، نويسنده , , F and Zumbiehli، نويسنده , , A and Siffert، نويسنده , , P، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
7
From page :
173
To page :
179
Abstract :
The measurement of the real defect concentration by Photo-induced current transient spectroscopy method (PICTS) is still unattainable owing to the presence of reflecting metal layer contacts that avoid the knowledge of the real absorbed photons number and then the real photogenerated current in the sample. The combination of the two methods PICTS and space charge limited current (SCLC) allows to the extraction of the mean apparent absorption coefficient of the excitation light in the considered sample, as a consequence that leads to solve few main problems like: the scaling of PICTS spectra in term of real defect concentration and the μτ product evolution.
Keywords :
CdTe , Picts , SCLC , Concentration , Defects
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2001
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2137305
Link To Document :
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