A simple model for the differential capacitance profile in the atomic layer doped field effect transistor (ALD-FET) in GaAs

We calculate the differential capacitance for the Atomic Layer Doped Field Effect Transistor (ALD-FET) in a GaAs matrix using a simple model which is proposed to describe the potential profile. This model gives the shape of the conduction band for this particular device. It also provides the depletion region width used to calculate the differential capacitance. We show that the conventional experimental Capacitance–Voltage (C–V) method used to seek information about the parameters of the device is not the correct one in this case. In order to be able to extract this information it is necessary to use the model proposed in this paper.