Depth profile and annealing behavior study of 350 keV Bi+ ions implanted into LiNbO3

The optically polished LiNbO3 samples were implanted with bismuth ions at 350 keV at different doses ranging from 3×1015 to 3×1016 Bi+ cm−2. Samples implanted with a nominal dose of 1×1016 ions cm−2 were subsequently annealed at 600 and 800°C in ambient air, respectively. The distribution of Bi+ ions in LiNbO3 was investigated by Rutherford backscattering spectrometry (RBS) of MeV He+ ions. The diffusion of the implanted Bi+ and recrystallization of Bi+-implanted LiNbO3 have also been studied at 600 and 800°C by RBS/channeling technique. In the present work it was found that the range profiles of implanted Bi+ ions were independent of the implanting doses. After 800°C annealing for 120 min partial recrystallization was observed. The annealing made the peak of Bi+ distribution move towards the surface of the sample. Evaporation was also observed during the thermal treatment.