Characterization of p-AgGa0.25In0.75Se2/n-Zn0.35Cd0.65S polycrystalline thin film heterojunctions

Polycrystalline thin film p-AgGa0.25In0.75Se2/n-Zn0.35Cd0.65S heterojunctions were fabricated and the current density–voltage, capacitance–voltage and spectral response characteristics of the junctions were studied. The heterojunction was illuminated in the back-wall configuration and an open-circuit voltage of 490 mV, a short-circuit current density of 27 mA cm−2 and an electrical conversion efficiency of 7.8% have been obtained for a cell with an active area of 1 cm2 under a solar input of 100 mW cm−2.