A new tool for measuring island dimensions and spatial correlations in quantum dot multilayers: Raman scattering interferences

We present a new tool to measure island dimensions and spatial correlations in quantum dot (QD) multilayers. This approach is based on interference phenomena between the Raman scattering probability amplitudes associated with each QD. From the Raman interference envelopes we deduced mean island heights in different Si/Ge multilayer structures. From the interference contrast, we deduced the vertical correlation degree. The latter compare very well with previous transmission electron microscopy (TEM) and X-ray measurements.