Optical and electrical spectroscopy of defects in low temperature grown GaAs

We report on a technique to characterize the deep defects in low temperature grown GaAs (LT-GaAs), based on a thin LT-GaAs layer embedded in the intrinsic zone of a pin diode. At this structure we have performed steady state and time dependent measurements of the n-channel conductance. Thus we yield information about the density, the activation energy, and the characteristic time constants of the deep defects.