• Title of article

    Magneto-photoluminescence study of electronic transitions in InAs/GaAs quantum dot layers

  • Author/Authors

    K. Kuldova، نويسنده , , K and Oswald، نويسنده , , J and Zeman، نويسنده , , J and Hulicius، نويسنده , , E and Pangr?c، نويسنده , , J and Melichar، نويسنده , , K and ?ime?ek، نويسنده , , T، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2002
  • Pages
    5
  • From page
    247
  • To page
    251
  • Abstract
    Magneto-photoluminescence of single- and multi-layered self-organised MOCVD grown InAs quantum dots in GaAs has been investigated at 77 K in magnetic fields up to B=27 T in Faraday configuration. From one up to six peaks are resolved at B=0 T in the photoluminescence spectra when the excitation intensity increases from 10 mW up to 1 W (514.5 nm line of Ar+ laser). Simple one particle Fock–Darwin model of two-dimensional electrons confined in a parabolic well describes satisfactorily the evolution of magneto-photoluminescence only for some peaks. The other peaks exhibit slight decrease in energy with increasing magnetic field (∼5 meV at 27 T).
  • Keywords
    InAs , GaAS , Magneto-luminescence , Quantum dots
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    2002
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2137901