Title of article :
Magneto-photoluminescence study of electronic transitions in InAs/GaAs quantum dot layers
Author/Authors :
K. Kuldova، نويسنده , , K and Oswald، نويسنده , , J and Zeman، نويسنده , , J and Hulicius، نويسنده , , E and Pangr?c، نويسنده , , J and Melichar، نويسنده , , K and ?ime?ek، نويسنده , , T، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
5
From page :
247
To page :
251
Abstract :
Magneto-photoluminescence of single- and multi-layered self-organised MOCVD grown InAs quantum dots in GaAs has been investigated at 77 K in magnetic fields up to B=27 T in Faraday configuration. From one up to six peaks are resolved at B=0 T in the photoluminescence spectra when the excitation intensity increases from 10 mW up to 1 W (514.5 nm line of Ar+ laser). Simple one particle Fock–Darwin model of two-dimensional electrons confined in a parabolic well describes satisfactorily the evolution of magneto-photoluminescence only for some peaks. The other peaks exhibit slight decrease in energy with increasing magnetic field (∼5 meV at 27 T).
Keywords :
InAs , GaAS , Magneto-luminescence , Quantum dots
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2002
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2137901
Link To Document :
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