Author/Authors :
Lynch، نويسنده , , S.A and Dhillon، نويسنده , , S.S and Bates، نويسنده , , R and Paul، نويسنده , , D.J and Arnone، نويسنده , , D.D and Robbins، نويسنده , , D.J and Ikonic، نويسنده , , Z and Kelsall، نويسنده , , R.W and Harrison، نويسنده , , P and Norris، نويسنده , , D.J and Cullis، نويسنده , , A.G and Pidgeon، نويسنده , , C.R and Murzyn، نويسنده , , P and Loudon، نويسنده , , A، نويسنده ,
Abstract :
Experimental results of electroluminescence in the terahertz gap, at 6 THz (or 40 μm) from Si/SiGe multi quantum well structures, grown by a commercial chemical vapour deposition system are presented. Theoretical simulations were used to design the heterolayer structure and to explain the emission and absorption features. Electrical and materials characterisation is also presented to demonstrate the quality of the heterolayers.
Keywords :
Silicon , Luminescence , Germanium , quantum effects
