Title of article :
2D versus 3D competition at the early stages of growth for Ge on Si(001) by molecular dynamics
Author/Authors :
Raiteri، نويسنده , , P and Celino، نويسنده , , M and Valentinotti، نويسنده , , F and Miglio، نويسنده , , L، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Abstract :
In this paper, we compare the total energy of equilibrated {105} pyramids, layer by layer films and flat prepyramids appearing in the epitaxial growth of Ge on Si(001). At variance to the common belief, we show the {105} pyramids not to be the most stable morphology when the elastic contribution of the Si substrate is taken into account.
Keywords :
Silicon , Germanium , epitaxy , DOTS
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B